Contact isolation scheme for thin buried oxide substrate devices

A method of forming a semiconductor-on-insulator (SOI) device includes defining a shallow trench isolation (STI) structure in an SOI substrate, the SOI substrate including a bulk layer, a buried insulator (BOX) layer over the bulk layer, and an SOI layer over the BOX layer; forming a doped region in...

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Bibliographic Details
Main Authors LIU QING, DORIS BRUCE B, VINET MAUD, GRENOUILLET LAURENT, CHENG KANGGUO, KHAKIFIROOZ ALI, LE TIEC YANNICK C
Format Patent
LanguageEnglish
Published 11.08.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of forming a semiconductor-on-insulator (SOI) device includes defining a shallow trench isolation (STI) structure in an SOI substrate, the SOI substrate including a bulk layer, a buried insulator (BOX) layer over the bulk layer, and an SOI layer over the BOX layer; forming a doped region in a portion of the bulk layer corresponding to a lower location of the STI structure, the doped region extending laterally into the bulk layer beneath the BOX layer; selectively etching the doped region of the bulk layer with respect to undoped regions of the bulk layer such that the lower location of the STI structure undercuts the BOX layer; and filling the STI structure with an insulator fill material.
Bibliography:Application Number: US201313859013