Diode, ESD protection circuit and method of manufacturing the same

A method of manufacturing a diode is provided. An N-type well region is formed in a first upper portion of an N-type epitaxial layer. A P-type drift region is formed in a second upper portion of the N-type epitaxial layer. An N-type doping region is formed in the N-type well region. A P-type doping...

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Bibliographic Details
Main Authors KO JAE-HYOK, KIM CHANG-SU, KO MINANG, JEON KYOUNG-KI, KIM HAN-GU
Format Patent
LanguageEnglish
Published 28.07.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of manufacturing a diode is provided. An N-type well region is formed in a first upper portion of an N-type epitaxial layer. A P-type drift region is formed in a second upper portion of the N-type epitaxial layer. An N-type doping region is formed in the N-type well region. A P-type doping region is formed in the P-type drift region. An isolation structure is formed in the P-type drift region. The isolation structure is disposed between the P-type doping region and the N-type well region. A first electrode is formed on a portion of the N-type epitaxial layer. The portion of the N-type epitaxial layer is disposed between the N-type well region and the P-type drift region. The first electrode overlaps a portion of the isolation structure. A connection structure is formed to electrically couple the N-type doping region and the first electrode.
Bibliography:Application Number: US201314082742