Detection of particle contamination on wafers

A method of the detection of particle contamination on a semiconductor wafer is provides which includes examining an area of the semiconductor wafer by a metrology system comprising a scatterometry or ellipsometry/reflectometry tool to obtain measured metrology data, comparing the measured metrology...

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Bibliographic Details
Main Authors HARTIG CARSTEN, URBANOWICZ ADAM MICHAL, FISCHER DANIEL
Format Patent
LanguageEnglish
Published 28.07.2015
Subjects
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
TESTING
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Summary:A method of the detection of particle contamination on a semiconductor wafer is provides which includes examining an area of the semiconductor wafer by a metrology system comprising a scatterometry or ellipsometry/reflectometry tool to obtain measured metrology data, comparing the measured metrology data with reference metrology data and determining the presence of particle contamination in the examined area of the semiconductor wafer based on the comparison of the measured metrology data with the reference metrology data.
Bibliography:Application Number: US201314063531