Selective local metal cap layer formation for improved electromigration behavior

A method of forming a wiring structure for an integrated circuit device includes forming one or more copper lines within an interlevel dielectric layer (ILD); masking selected regions of the one or more copper lines; selectively plating metal cap regions over exposed regions of the one or more coppe...

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Main Authors FILIPPI RONALD G, SIMON ANDREW H, CULP JAMES A, DYER THOMAS W, GRECO STEPHEN E, CHOI SAMUEL S, BAO JUNJING, LUSTIG NAFTALI E, BONILLA GRISELDA, ANGYAL MATTHEW S
Format Patent
LanguageEnglish
Published 07.07.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Abstract A method of forming a wiring structure for an integrated circuit device includes forming one or more copper lines within an interlevel dielectric layer (ILD); masking selected regions of the one or more copper lines; selectively plating metal cap regions over exposed regions of the one or more copper lines; and forming a conformal insulator layer over the metal cap regions and uncapped regions of the one or more copper lines.
AbstractList A method of forming a wiring structure for an integrated circuit device includes forming one or more copper lines within an interlevel dielectric layer (ILD); masking selected regions of the one or more copper lines; selectively plating metal cap regions over exposed regions of the one or more copper lines; and forming a conformal insulator layer over the metal cap regions and uncapped regions of the one or more copper lines.
Author GRECO STEPHEN E
LUSTIG NAFTALI E
CULP JAMES A
FILIPPI RONALD G
SIMON ANDREW H
CHOI SAMUEL S
BAO JUNJING
BONILLA GRISELDA
ANGYAL MATTHEW S
DYER THOMAS W
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– fullname: CHOI SAMUEL S
– fullname: BAO JUNJING
– fullname: LUSTIG NAFTALI E
– fullname: BONILLA GRISELDA
– fullname: ANGYAL MATTHEW S
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Snippet A method of forming a wiring structure for an integrated circuit device includes forming one or more copper lines within an interlevel dielectric layer (ILD);...
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SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title Selective local metal cap layer formation for improved electromigration behavior
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