Plasma processing method

• Main Authors: SHIMADA TAKESHI, YAMADA KENTARO, ABE TAKAHIRO
• Format: Patent
• Language: English
• Published: 30.06.2015
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DECORATIVE ARTS; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GLASS; INDUCTANCES; INFORMATION STORAGE; INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; JOINING GLASS TO GLASS OR OTHER MATERIALS; MAGNETS; METALLURGY; MINERAL OR SLAG WOOL; MOSAICS; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; PAPERHANGING; PERFORMING OPERATIONS; PHYSICS; PRODUCING DECORATIVE EFFECTS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS; SURFACE TREATMENT OF GLASS; TARSIA WORK; TRANSFORMERS; TRANSPORTING

In a plasma processing method of dry-etching of a magnetic film having a thickness of 200 nm to 500 nm, a plasma processing method of dry-etching of a sample having the magnetic film on which a multilayered film including a resist film, an non-organic film underlying the resist film, a Cr film underlying the non-organic film, and an Al2O3 film underlying the Cr film.