Method and apparatus for forming a CMOS device

A method and apparatus for forming a CMOS device are provided. The CMOS device may include an N-type channel region formed of an III-V material and a P-type channel region formed of a germanium material. Over each channel may be formed corresponding gates and source/drain regions. The source/drain r...

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Main Authors YEN MING-LIANG, WANG LI-TING, LIN CHENG-TUNG, TSAI TENGUN, LIN KUO-YIN, CHEN CHI-YUAN, CHANG HUICHENG, PAN WANUN, LIN CHUN-HSIUNG
Format Patent
LanguageEnglish
Published 23.06.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method and apparatus for forming a CMOS device are provided. The CMOS device may include an N-type channel region formed of an III-V material and a P-type channel region formed of a germanium material. Over each channel may be formed corresponding gates and source/drain regions. The source/drain regions may be formed of a germanium material and one or more metallization layers. An anneal may be performed to form ohmic contacts for the source/drain regions. Openings may be formed in a dielectric layer covering the device and conductive plugs may be formed to provide contact to the source/drain regions.
Bibliography:Application Number: US201313894902