Vertical MOSFET electrostatic discharge device

A vertical MOSFET electrostatic discharge device is disclosed, including a substrate comprising a plurality of trenches, a recessed gate disposed in each trench, a drain region disposed between each of the two neighboring recessed gates, an electrostatic discharge implant region disposed under each...

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Bibliographic Details
Main Authors JANG JENG-HSING, CHEN YI-NAN, LIU HSIEN-WEN
Format Patent
LanguageEnglish
Published 09.06.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A vertical MOSFET electrostatic discharge device is disclosed, including a substrate comprising a plurality of trenches, a recessed gate disposed in each trench, a drain region disposed between each of the two neighboring recessed gates, an electrostatic discharge implant region disposed under each drain region, and a source region surrounding and disposed under the recessed gates and the electrostatic discharge implant regions.
Bibliography:Application Number: US201113281293