Anti-tampering devices and techniques for magnetoresistive random access memory

A system may include circuitry and a magnetoresistive random access memory (MRAM) die including at least one MRAM cell. The circuitry may be configured to detect attempted tampering with the MRAM die and generate a signal based on the detected attempted tampering. The signal may be sufficient to dam...

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Bibliographic Details
Main Authors TUCKER JAMES L, KATTI ROMNEY R, KOHLI ANUJ
Format Patent
LanguageEnglish
Published 26.05.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:A system may include circuitry and a magnetoresistive random access memory (MRAM) die including at least one MRAM cell. The circuitry may be configured to detect attempted tampering with the MRAM die and generate a signal based on the detected attempted tampering. The signal may be sufficient to damage or destroy at least one layer of the at least one MRAM cell or a fuse electrically connected to a read line of the at least one MRAM cell.
Bibliography:Application Number: US201213429761