High illumination efficiency light emitting diode

A light emitting diode includes a substrate, a first semiconductor layer, a luminous layer, a second semiconductor layer, a current diffusion layer, a third semiconductor layer, a first electrode, a second electrode, and an insulation layer. The first semiconductor layer is formed above the substrat...

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Bibliographic Details
Main Author HUANG KUN-FU
Format Patent
LanguageEnglish
Published 12.05.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A light emitting diode includes a substrate, a first semiconductor layer, a luminous layer, a second semiconductor layer, a current diffusion layer, a third semiconductor layer, a first electrode, a second electrode, and an insulation layer. The first semiconductor layer is formed above the substrate. The luminous layer is formed on the first semiconductor layer, and exposes a portion of the first semiconductor layer. The second semiconductor layer is formed on the luminous layer. The current diffusion layer is formed on the second semiconductor layer. The third semiconductor layer is formed on the current diffusion layer. The first electrode is formed on the first semiconductor layer. The second electrode includes a base portion formed on the surface of the substrate, and plural comb structures extending upward vertically. Each tip of the comb structure is in the third semiconductor layer. The insulation layer exposes the tip of each comb structure.
Bibliography:Application Number: US201414164247