Method of forming a high thermal conducting semiconductor device package

A semiconductor device package (100) includes a heat spreader (503) formed by depositing a first thin film layer (301) of a first metal on a top surface (150) of a die (110) and to exposed portions of a top surface of an encapsulant (208), depositing a second thin film layer (402) of a second metal...

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Bibliographic Details
Main Authors TANG JINBANG, YAP WENG FOONG
Format Patent
LanguageEnglish
Published 12.05.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device package (100) includes a heat spreader (503) formed by depositing a first thin film layer (301) of a first metal on a top surface (150) of a die (110) and to exposed portions of a top surface of an encapsulant (208), depositing a second thin film layer (402) of a second metal on a top surface of the first thin film layer, and depositing a third layer (503) of a third metal on a top surface of the second thin film layer.
Bibliography:Application Number: US201313903308