Top corner rounding by implant-enhanced wet etching

When forming metallization layers of advanced semiconductor devices, one often has to fill apertures with a high aspect ratio with a metal, such as copper. The present disclosure provides a convenient method for forming apertures with a high aspect ratio in an insulating layer. This insulating layer...

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Bibliographic Details
Main Authors LEPPER MARCO, MOLL HANS-PETER, GRAF WERNER
Format Patent
LanguageEnglish
Published 05.05.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:When forming metallization layers of advanced semiconductor devices, one often has to fill apertures with a high aspect ratio with a metal, such as copper. The present disclosure provides a convenient method for forming apertures with a high aspect ratio in an insulating layer. This insulating layer may have been deposited on the surface of a semiconductor device. The proposed method relies on an ion implantation step performed on the insulating layer, followed by an etch, which is preferably a wet etch.
Bibliography:Application Number: US201314011413