Biasing circuit for a magnetic field sensor, and corresponding biasing method

Described herein is a biasing circuit for a magnetic-field sensor; the magnetic-field sensor is provided with a first detection structure, which generates a first electrical detection quantity as a function of a first component of an external magnetic field, and a second detection structure, which g...

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Bibliographic Details
Main Authors BOTTINELLI FABIO, POZZATI ENRICO, ROMANI CARLO ALBERTO
Format Patent
LanguageEnglish
Published 28.04.2015
Subjects
MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
NANOTECHNOLOGY
PERFORMING OPERATIONS
PHYSICS
SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
TESTING
TRANSPORTING
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Summary:Described herein is a biasing circuit for a magnetic-field sensor; the magnetic-field sensor is provided with a first detection structure, which generates a first electrical detection quantity as a function of a first component of an external magnetic field, and a second detection structure, which generates a second electrical detection quantity as a function of a second component of an external magnetic field. The biasing circuit electrically supplies the first detection structure and the second detection structure in respective biasing time intervals, at least partially distinct from one another, which preferably do not temporally overlap one other.
Bibliography:Application Number: US201113332044