Semiconductor device including a fin and a drain extension region and manufacturing method
One embodiment of a semiconductor device includes a fin on a first side of a semiconductor body. The semiconductor device further includes a body region of a second conductivity type in at least a part of the fin. The semiconductor device further includes a drain extension region of a first conducti...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
14.04.2015
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Subjects | |
Online Access | Get full text |
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