Semiconductor device including a fin and a drain extension region and manufacturing method

One embodiment of a semiconductor device includes a fin on a first side of a semiconductor body. The semiconductor device further includes a body region of a second conductivity type in at least a part of the fin. The semiconductor device further includes a drain extension region of a first conducti...

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Bibliographic Details
Main Authors KAMPEN CHRISTIAN, MEISER ANDREAS
Format Patent
LanguageEnglish
Published 14.04.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:One embodiment of a semiconductor device includes a fin on a first side of a semiconductor body. The semiconductor device further includes a body region of a second conductivity type in at least a part of the fin. The semiconductor device further includes a drain extension region of a first conductivity type, a source and a drain region of the first conductivity type, and a gate structure adjoining opposing walls of the fin. The body region and the drain extension region are arranged one after another between the source region and the drain region.
Bibliography:Application Number: US201213692462