Semiconductor device including a fin and a drain extension region and manufacturing method
One embodiment of a semiconductor device includes a fin on a first side of a semiconductor body. The semiconductor device further includes a body region of a second conductivity type in at least a part of the fin. The semiconductor device further includes a drain extension region of a first conducti...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
14.04.2015
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Subjects | |
Online Access | Get full text |
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Abstract | One embodiment of a semiconductor device includes a fin on a first side of a semiconductor body. The semiconductor device further includes a body region of a second conductivity type in at least a part of the fin. The semiconductor device further includes a drain extension region of a first conductivity type, a source and a drain region of the first conductivity type, and a gate structure adjoining opposing walls of the fin. The body region and the drain extension region are arranged one after another between the source region and the drain region. |
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AbstractList | One embodiment of a semiconductor device includes a fin on a first side of a semiconductor body. The semiconductor device further includes a body region of a second conductivity type in at least a part of the fin. The semiconductor device further includes a drain extension region of a first conductivity type, a source and a drain region of the first conductivity type, and a gate structure adjoining opposing walls of the fin. The body region and the drain extension region are arranged one after another between the source region and the drain region. |
Author | KAMPEN CHRISTIAN MEISER ANDREAS |
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Notes | Application Number: US201213692462 |
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RelatedCompanies | INFINEON TECHNOLOGIES AUSTRIA AG |
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Snippet | One embodiment of a semiconductor device includes a fin on a first side of a semiconductor body. The semiconductor device further includes a body region of a... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | Semiconductor device including a fin and a drain extension region and manufacturing method |
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