Semiconductor devices and methods for manufacturing semiconductor devices
A method includes a step of performing a time multiplexed etching process, wherein the last etching step of the time multiplexed etching process is of a first time duration. After performing the time multiplexed etching process, an etching step having a second time duration is performed, wherein the...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
14.04.2015
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Subjects | |
Online Access | Get full text |
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Summary: | A method includes a step of performing a time multiplexed etching process, wherein the last etching step of the time multiplexed etching process is of a first time duration. After performing the time multiplexed etching process, an etching step having a second time duration is performed, wherein the second time duration is greater than the first time duration. |
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Bibliography: | Application Number: US201313851691 |