Designing method of non-volatile memory device, manufacturing method of non-volatile memory device, and non-volatile memory device

• Main Authors: TSUJI KIYOTAKA, HAYAKAWA YUKIO, YONEDA SHINICHI, KAWAHARA AKIFUMI
• Format: Patent
• Language: English
• Published: 31.03.2015
• Subjects: BASIC ELECTRIC ELEMENTS; CALCULATING; COMPUTING; COUNTING; ELECTRIC DIGITAL DATA PROCESSING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INFORMATION STORAGE; PHYSICS; SEMICONDUCTOR DEVICES; STATIC STORES

A method of designing a cross-point non-volatile memory device including memory elements arranged in (N×M) matrix, each of the memory elements including a variable resistance element and a bidirectional current steering element connected in series with the variable resistance element, the method comprises the step of: when an absolute value of a low-resistance state writing voltage is VR and an absolute value of a current flowing through the variable resistance element having changed to a low-resistance state by application of the low-resistance state writing voltage to both ends of the variable resistance element in a high-resistance state is Ion, and a relationship between a voltage V0 applied to both ends of the bidirectional current steering element and a current I flowing through the bidirectional current steering element is approximated as |V0|=a×Log(I)+b, deciding N, M, VR, Ion, a, and b such that b−VR/2>a×[Log {(N−1)×(M−1)}−Log(Ion)] is satisfied (S101).