Structure having a planar bonding surface

A structure and method of handling a device wafer during through-silicon via (TSV) processing are described in which a device wafer is bonded to a temporary support substrate with a permanent thermosetting material. Upon removal of the temporary support substrate a planar frontside bonding surface i...

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Bibliographic Details
Main Author LEE KEVIN J
Format Patent
LanguageEnglish
Published 31.03.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A structure and method of handling a device wafer during through-silicon via (TSV) processing are described in which a device wafer is bonded to a temporary support substrate with a permanent thermosetting material. Upon removal of the temporary support substrate a planar frontside bonding surface including a reflowed solder bump and the permanent thermosetting material is exposed.
Bibliography:Application Number: US201113994660