Method for etching substrate

One or more embodiments relate to a method of making a semiconductor structure, comprising: forming a patterned metallic layer over a semiconductor substrate; forming a second layer over the patterned metallic layer; and etching the substrate.

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Bibliographic Details
Main Author ENGELHARDT MANFRED
Format Patent
LanguageEnglish
Published 31.03.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:One or more embodiments relate to a method of making a semiconductor structure, comprising: forming a patterned metallic layer over a semiconductor substrate; forming a second layer over the patterned metallic layer; and etching the substrate.
Bibliography:Application Number: US201113282491