Stacked half-bridge power module

According to an exemplary embodiment, a stacked half-bridge power module includes a high side device having a high side power terminal coupled to a high side substrate and a low side device having a low side power terminal coupled to a low side substrate. The high side and low side devices are stack...

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Bibliographic Details
Main Author HAUENSTEIN HENNING M
Format Patent
LanguageEnglish
Published 24.03.2015
Subjects
BASIC ELECTRIC ELEMENTS
CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
PRINTED CIRCUITS
SEMICONDUCTOR DEVICES
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Summary:According to an exemplary embodiment, a stacked half-bridge power module includes a high side device having a high side power terminal coupled to a high side substrate and a low side device having a low side power terminal coupled to a low side substrate. The high side and low side devices are stacked on opposite sides of a common conductive interface. The common conductive interface electrically, mechanically, and thermally couples a high side output terminal of the high side device to a low side output terminal of the low side device. The high side device and the low side device can each include an insulated-gate bipolar transistor (IGBT) in parallel with a diode.
Bibliography:Application Number: US201113188002