Lasers with GaPSb barrier layers

A laser active region can include a quantum well barrier having GaPSb. The active region can include one or more quantum wells, and a quantum well barrier having GaPSb bounding each side of each of the one or more quantum wells. The quantum well barrier can be GaP1-wSbw, where w ranges from about 0....

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Bibliographic Details
Main Author JOHNSON RALPH H
Format Patent
LanguageEnglish
Published 10.03.2015
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Summary:A laser active region can include a quantum well barrier having GaPSb. The active region can include one or more quantum wells, and a quantum well barrier having GaPSb bounding each side of each of the one or more quantum wells. The quantum well barrier can be GaP1-wSbw, where w ranges from about 0.12 to about 0.25 mole fraction, and can have a thickness of from about 20 Angstroms to about 50 Angstroms. The one or more quantum wells include InGaAs or InGaAsP. Various types of lasers can have the laser active region. Such a laser can be capable of emitting light having a wavelength of about 850 nm or +/−150 nm. As an example, a vertical cavity surface-emitting laser (VCSEL) having the laser active region. The laser may also be a tunneling laser.
Bibliography:Application Number: US201313801444