MOS transistor and process thereof

A MOS transistor includes a gate structure on a substrate, and the gate structure includes a wetting layer, a transitional layer and a low resistivity material from bottom to top, wherein the transitional layer has the properties of a work function layer, and the gate structure does not have any wor...

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Main Authors HSIEH YA-HSUEH, CHEN CHIEN-HAO, HUANG HSIN-FU, SUN CHI-YUAN, TSAI MINUAN, LIN CHIN-FU, HSU CHI-MAO, CHEN WEI-YU
Format Patent
LanguageEnglish
Published 10.03.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A MOS transistor includes a gate structure on a substrate, and the gate structure includes a wetting layer, a transitional layer and a low resistivity material from bottom to top, wherein the transitional layer has the properties of a work function layer, and the gate structure does not have any work function layers. Moreover, the present invention provides a MOS transistor process forming said MOS transistor.
Bibliography:Application Number: US201213591226