Defective memory column replacement with load isolation
Exemplary embodiments of the present invention disclose a method and system for substituting a group of memory cells for a defective group of memory cells in a memory. In a step, an exemplary embodiment replaces a signal path to a group of defective memory cells with a signal path to a redundant gro...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
24.02.2015
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Subjects | |
Online Access | Get full text |
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Summary: | Exemplary embodiments of the present invention disclose a method and system for substituting a group of memory cells for a defective group of memory cells in a memory. In a step, an exemplary embodiment replaces a signal path to a group of defective memory cells with a signal path to a redundant group of memory cells. In another step, an exemplary embodiment isolates the signal path to the redundant group of memory cells from a load imposed by the signal path to the replaced group of defective memory cells. |
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Bibliography: | Application Number: US201313733948 |