ReRAM device structure

A resistive random access memory (ReRAM) includes a first metal layer having a first metal and a metal-oxide layer on the first metal layer. The metal-oxide layer includes the first metal. The ReRAM further includes a second metal layer over the metal-oxide layer and a first continuous conductive ba...

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Bibliographic Details
Main Authors ZHOU FENG, CHANG KO-MIN, HONG CHEONG M
Format Patent
LanguageEnglish
Published 24.02.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A resistive random access memory (ReRAM) includes a first metal layer having a first metal and a metal-oxide layer on the first metal layer. The metal-oxide layer includes the first metal. The ReRAM further includes a second metal layer over the metal-oxide layer and a first continuous conductive barrier layer in physical contact with sidewalls of the first metal layer and of the metal-oxide layer.
Bibliography:Application Number: US201414490062