ReRAM device structure
A resistive random access memory (ReRAM) includes a first metal layer having a first metal and a metal-oxide layer on the first metal layer. The metal-oxide layer includes the first metal. The ReRAM further includes a second metal layer over the metal-oxide layer and a first continuous conductive ba...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
24.02.2015
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Subjects | |
Online Access | Get full text |
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Summary: | A resistive random access memory (ReRAM) includes a first metal layer having a first metal and a metal-oxide layer on the first metal layer. The metal-oxide layer includes the first metal. The ReRAM further includes a second metal layer over the metal-oxide layer and a first continuous conductive barrier layer in physical contact with sidewalls of the first metal layer and of the metal-oxide layer. |
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Bibliography: | Application Number: US201414490062 |