Smart subfield method for E-beam lithography

The present disclosure provides a method of improving a layer to layer overlay error by an electron beam lithography system. The method includes generating a smart boundary of two subfields at the first pattern layer and obeying the smart boundary at all consecutive pattern layers. The same subfield...

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Bibliographic Details
Main Authors CHEN JENG-HORNG, CHEN PEI-SHIANG, WANG SHIHI, CHENG NIAN-FUH, WANG HUNGUN, CHEN CHENG-HUNG, LIN CHIAI
Format Patent
LanguageEnglish
Published 03.02.2015
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CALCULATING
CINEMATOGRAPHY
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:The present disclosure provides a method of improving a layer to layer overlay error by an electron beam lithography system. The method includes generating a smart boundary of two subfields at the first pattern layer and obeying the smart boundary at all consecutive pattern layers. The same subfield is exposed by the same electron beam writer at all pattern layers. The overlay error caused by the different electron beam at different layer is improved.
Bibliography:Application Number: US201314107540