Semiconductor device

A semiconductor device includes: a substrate including a first epitaxial layer that has a first electrical type, and a second epitaxial layer; a transistor that includes a source region and an insulating spacer; an inner surrounding structure including an annular trench and an insulating spacer; an...

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Bibliographic Details
Main Authors LIN YUNG-FA, HSU SHOU-YI, CHEN MAIN-GWO, SHIH YIUN, WU MENG-WEI
Format Patent
LanguageEnglish
Published 18.11.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes: a substrate including a first epitaxial layer that has a first electrical type, and a second epitaxial layer; a transistor that includes a source region and an insulating spacer; an inner surrounding structure including an annular trench and an insulating spacer; an outer surrounding structure that has a second electrical type opposite to the first electrical type, and that is disposed adjacent to an upper surface of the second epitaxial layer to surround and contact the inner surrounding structure; and a conductive structure connecting to the source region, and the inner and outer surrounding structures.
Bibliography:Application Number: US201213348961