Phase change memory word line driver

A method for improving sub-word line response comprises generating a variable substrate bias determined by at least one user parameter. The variable substrate bias is applied to a sub-word line driver in a selected sub-block of a memory. A voltage disturbance on a sub-word line in communication with...

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Bibliographic Details
Main Author PYEON HONG BEOM
Format Patent
LanguageEnglish
Published 04.11.2014
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A method for improving sub-word line response comprises generating a variable substrate bias determined by at least one user parameter. The variable substrate bias is applied to a sub-word line driver in a selected sub-block of a memory. A voltage disturbance on a sub-word line in communication with the sub-word line driver is minimized by modifying a variable substrate bias of the sub-word line driver to change a transconductance of the sub-word line driver thereby.
Bibliography:Application Number: US201313973600