Temperature-compensated semiconductor resistor device

A semiconductor device includes: a resistance R whose resistance value varies in response to a substrate temperature variation; a resistance corrector that is coupled in series with the resistance R and switches its resistance value by a preset resistance step width to suppress a resistance value va...

Full description

Saved in:
Bibliographic Details
Main Authors SAKO KAZUTOSHI, MATSUZAKI TOMOKAZU
Format Patent
LanguageEnglish
Published 04.11.2014
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:A semiconductor device includes: a resistance R whose resistance value varies in response to a substrate temperature variation; a resistance corrector that is coupled in series with the resistance R and switches its resistance value by a preset resistance step width to suppress a resistance value variation of the resistance R; a first voltage generator for generating a first voltage that varies in response to the substrate temperature; a second voltage generator for generating second voltages Vf1 to Vfn−1 for specifying the first voltage at a point when a switching operation of the resistance value of the resistance corrector is performed; and a resistance switch unit for switching the resistance value of the resistance corrector by comparing the first voltage and the second voltages Vf1 to Vfn−1.
Bibliography:Application Number: US201313770668