Polishing solution for copper polishing, and polishing method using same

• Main Authors: SHINODA TAKASHI, ONO HIROSHI, OKADA YUUHEI
• Format: Patent
• Language: English
• Published: 04.11.2014
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The polishing solution for copper polishing of the invention comprises a first organic acid component which is at least one type selected from among an organic acid containing a hydroxyl group, an organic acid salt and an organic acid anhydride, an inorganic acid component which is at least one type selected from among a dibasic or greater inorganic acid and an inorganic acid salt, an amino acid, a protective film-forming agent, an abrasive grain, an oxidizing agent and water, wherein the inorganic acid component content in terms of inorganic acid is 0.15 mass % or greater, the amino acid content is 0.30 mass % or greater, the protective film-forming agent content is 0.10 mass % or greater, based on the entire polishing solution for copper polishing, and the ratio of the first organic acid component content in terms of organic acid with respect to the protective film-forming agent content is at least 1.5.