System, method and apparatus for detecting DC bias in a plasma processing chamber

A system and method of measuring a self bias DC voltage on a semiconductor wafer in a plasma chamber includes generating a plasma between a top electrode and a top surface of an electrostatic chuck in a plasma chamber including applying one or more RF signals to one or both of the top electrode and...

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Bibliographic Details
Main Authors MARAKHTANOV ALEXEI, LUCCHESI KEN, DHINDSA RAJINDER
Format Patent
LanguageEnglish
Published 28.10.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
TESTING
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Summary:A system and method of measuring a self bias DC voltage on a semiconductor wafer in a plasma chamber includes generating a plasma between a top electrode and a top surface of an electrostatic chuck in a plasma chamber including applying one or more RF signals to one or both of the top electrode and electrostatic chuck. The wafer is supported on the top surface of an electrostatic chuck. The self bias DC voltage is developed on the wafer. A vibrating electrode is oscillated to produce a variable capacitance, the vibrating electrode is located in the electrostatic chuck. An electrical current is developed in a sensor circuit. An output voltage is measured across a sampling resistor in the sensor circuit, a second DC potential is applied to the vibrating electrode to nullify the output voltage. The second DC potential is equal to the self bias DC voltage on the wafer.
Bibliography:Application Number: US201113301580