Electron beam lithography system and method for improving throughput

• Main Authors: WANG WENUAN, LIN BURN JENG, SHIN JAW-JUNG, LIN SHY-JAY
• Format: Patent
• Language: English
• Published: 07.10.2014
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRICITY; ELECTROGRAPHY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; HOLOGRAPHY; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MATERIALS THEREFOR; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; NANOTECHNOLOGY; ORIGINALS THEREFOR; PERFORMING OPERATIONS; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS; TRANSPORTING

An electron beam lithography method and apparatus for improving throughput is disclosed. An exemplary lithography method includes receiving a pattern layout having a pattern layout dimension; shrinking the pattern layout dimension; and overexposing a material layer to the shrunk pattern layout dimension, thereby forming the pattern layout having the pattern layout dimension on the material layer.