Method for fabricating semiconductor device and PMOS device fabricated by the method

A method for fabricating a semiconductor device is described. A gate layer, a C-doped first protective layer and a hard mask layer are formed on a substrate and then patterned to form a first stack in a first area and a second stack in a second area. A second protective layer is formed on the sidewa...

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Bibliographic Details
Main Authors TSAI ZEN-JAY, CHEN CHUNIA, HSU SHIHIEH, CHOU YING-HUNG, SU SHIH-HAO, PAI CHI-HORN, HSU SHAO-HUA, CHEN CHIHUNG
Format Patent
LanguageEnglish
Published 23.09.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for fabricating a semiconductor device is described. A gate layer, a C-doped first protective layer and a hard mask layer are formed on a substrate and then patterned to form a first stack in a first area and a second stack in a second area. A second protective layer is formed on the sidewalls of the first and the second stacks. A blocking layer is formed in the first area and a first spacer formed on the sidewall of the second protective layers on the sidewall of the second stack in the second area. A semiconductor compound is formed in the substrate beside the first spacer. The blocking layer and the first spacer are removed. The hard mask layer in the first stack and the second stack is removed.
Bibliography:Application Number: US201213414375