Method for fabricating semiconductor device and PMOS device fabricated by the method
A method for fabricating a semiconductor device is described. A gate layer, a C-doped first protective layer and a hard mask layer are formed on a substrate and then patterned to form a first stack in a first area and a second stack in a second area. A second protective layer is formed on the sidewa...
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Main Authors | , , , , , , , |
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Format | Patent |
Language | English |
Published |
23.09.2014
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Subjects | |
Online Access | Get full text |
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Summary: | A method for fabricating a semiconductor device is described. A gate layer, a C-doped first protective layer and a hard mask layer are formed on a substrate and then patterned to form a first stack in a first area and a second stack in a second area. A second protective layer is formed on the sidewalls of the first and the second stacks. A blocking layer is formed in the first area and a first spacer formed on the sidewall of the second protective layers on the sidewall of the second stack in the second area. A semiconductor compound is formed in the substrate beside the first spacer. The blocking layer and the first spacer are removed. The hard mask layer in the first stack and the second stack is removed. |
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Bibliography: | Application Number: US201213414375 |