Superjunction structures for power devices and methods of manufacture

In a general aspect, a power device can include at least one N-type epitaxial layer disposed on a substrate and a plurality of N-pillars and P-pillars that define alternating P-N-pillars in the at least one N-type epitaxial layer. The power device can also include an active region and a termination...

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Bibliographic Details
Main Authors YEDINAK JOSEPH A, SHENOY PRAVEEN MURALEEDHARAN, LEE JAEGIL, HEIDENREICH HAROLD, RINEHIMER MARK L, REICHL DWAYNE S
Format Patent
LanguageEnglish
Published 16.09.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In a general aspect, a power device can include at least one N-type epitaxial layer disposed on a substrate and a plurality of N-pillars and P-pillars that define alternating P-N-pillars in the at least one N-type epitaxial layer. The power device can also include an active region and a termination region, where the termination region surrounds the active region. The alternating P-N-pillars can be disposed in both the active region and the termination region, where the termination region can include a predetermined number of floating P-pillars.
Bibliography:Application Number: US201113095690