Microelectronic memory devices having flat stopper layers

Memory devices comprise a lower layer that extends across a cell array region and across a peripheral region and that includes a flat outer surface from the cell array region to the peripheral region. A signal transfer conductor layer extends in the cell array region beneath the flat outer surface o...

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Bibliographic Details
Main Authors KIM HYUNCHUL, BAN HYODONG, LEE HYUNJU, PARK WONMO
Format Patent
LanguageEnglish
Published 19.08.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Memory devices comprise a lower layer that extends across a cell array region and across a peripheral region and that includes a flat outer surface from the cell array region to the peripheral region. A signal transfer conductor layer extends in the cell array region beneath the flat outer surface of the lower layer and extends in the peripheral region above the flat outer surface of the lower layer. An insulating layer is provided on the lower layer, including a flat outer surface from the cell array region to the peripheral region. A flat stopper layer is provided on the flat outer surface of the insulating layer and extending across the cell array region and the peripheral region. Related methods are also provided.
Bibliography:Application Number: US201314016912