Nonvolatile semiconductor memory device and method of manufacturing the same

According to one embodiment, a nonvolatile semiconductor memory device includes sheet-like memory strings arranged in a matrix shape substantially perpendicularly to a substrate. A control gate electrode film includes a common connecting section that extends in a first direction and an electrode for...

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Bibliographic Details
Main Author KIYOTOSHI MASAHIRO
Format Patent
LanguageEnglish
Published 15.07.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:According to one embodiment, a nonvolatile semiconductor memory device includes sheet-like memory strings arranged in a matrix shape substantially perpendicularly to a substrate. A control gate electrode film includes a common connecting section that extends in a first direction and an electrode forming section that is provided for each of memory cells above or below a floating gate electrode film via an inter-electrode dielectric film to project from the common connecting section in a second direction. The floating gate electrode film extends in the second direction and is formed on a first principal plane of a sheet-like semiconductor film via a tunnel dielectric film.
Bibliography:Application Number: US201213352693