Enriched silicon precursor compositions and apparatus and processes for utilizing same

Isotopically enriched silicon precursor compositions are disclosed, as useful in ion implantation to enhance performance of the ion implantation system, in relation to corresponding ion implantation lacking such isotopic enrichment of the silicon precursor composition. The silicon dopant composition...

Full description

Saved in:
Bibliographic Details
Main Authors MAYER JAMES J, RAY RICHARD S, KAIM ROBERT, SWEENEY JOSEPH D
Format Patent
LanguageEnglish
Published 15.07.2014
Subjects
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GAMMA RAY OR X-RAY MICROSCOPES
IRRADIATION DEVICES
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
NUCLEAR ENGINEERING
NUCLEAR PHYSICS
PAINTS
PHYSICS
POLISHES
SEMICONDUCTOR DEVICES
TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR
Online AccessGet full text

Cover

More Information
Summary:Isotopically enriched silicon precursor compositions are disclosed, as useful in ion implantation to enhance performance of the ion implantation system, in relation to corresponding ion implantation lacking such isotopic enrichment of the silicon precursor composition. The silicon dopant composition includes at least one silicon compound that is isotopically enriched above natural abundance in at least one of 28Si, 29Si, and 30Si, and may include a supplemental gas including at least one of a co-species gas and a diluent gas. Dopant gas supply apparatus for providing such silicon dopant compositions to an ion implanter are described, as well as ion implantation systems including such dopant gas supply apparatus.
Bibliography:Application Number: US201313898809