High selectivity, low damage electron-beam delineation etch

A method and apparatus for selective etching a substrate using a focused beam. For example, multiple gases may be used that are involved in competing beam-induced and spontaneous reactions, with the result depending on the materials on the substrate. The gases may include, for example, an etchant ga...

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Bibliographic Details
Main Authors CHANDLER CLIVE D, RANDOLPH STEVEN
Format Patent
LanguageEnglish
Published 15.07.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method and apparatus for selective etching a substrate using a focused beam. For example, multiple gases may be used that are involved in competing beam-induced and spontaneous reactions, with the result depending on the materials on the substrate. The gases may include, for example, an etchant gas and an auxiliary gas that inhibits etching.
Bibliography:Application Number: US20090363376