Enhanced capture pads for through semiconductor vias

Method of forming a capture pad on a semiconductor substrate. The method includes providing a semiconductor substrate having an active side and an inactive side and having a plurality of unfilled TSVs extending between the active side and the inactive side; filling the TSVs with a metal such that th...

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Bibliographic Details
Main Authors VOLANT RICHARD P, PETRARCA KEVIN S, LAFONTANT GARY, GRIESEMER JOHN A, FAROOQ MUKTA G
Format Patent
LanguageEnglish
Published 08.07.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Method of forming a capture pad on a semiconductor substrate. The method includes providing a semiconductor substrate having an active side and an inactive side and having a plurality of unfilled TSVs extending between the active side and the inactive side; filling the TSVs with a metal such that the metal is recessed with respect to at least one of the active side and the inactive side and does not entirely fill the TSVs; defining capture pad areas on the at least one of the active side and inactive side adjacent to the recessed TSVs; filling the capture pad areas and recessed TSVs with the same metal to form a capture pad in direct contact with each of the TSVs, each of the capture pads having an all metal portion that follows an outline of each of the TSVs. Also disclosed is a semiconductor substrate having a capture pad.
Bibliography:Application Number: US201213670694