Partially depleted dielectric resurf LDMOS
An partially depleted Dieler LDMOSFET transistor (100) is provided which includes a substrate (150), a drift region (110) surrounding a drain region (128), a first well region (107) surrounding source region (127), a well buffer region (106) separating the drift region and first well region to at le...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
08.07.2014
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Subjects | |
Online Access | Get full text |
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Summary: | An partially depleted Dieler LDMOSFET transistor (100) is provided which includes a substrate (150), a drift region (110) surrounding a drain region (128), a first well region (107) surrounding source region (127), a well buffer region (106) separating the drift region and first well region to at least partly define a first channel region, a gate electrode (118) formed over the first channel region having a source-side gate edge aligned with the first well region (107), an LDD extension region (120) extending from the source region to the channel region, and a dielectric RESURF drain extension structure (161) formed at the drain of the gate electrode (118) using the plurality of STI stripes (114). |
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Bibliography: | Application Number: US20100860565 |