Partially depleted dielectric resurf LDMOS

An partially depleted Dieler LDMOSFET transistor (100) is provided which includes a substrate (150), a drift region (110) surrounding a drain region (128), a first well region (107) surrounding source region (127), a well buffer region (106) separating the drift region and first well region to at le...

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Bibliographic Details
Main Authors YANG HONGNING, ZUO JIANG-KAI
Format Patent
LanguageEnglish
Published 08.07.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An partially depleted Dieler LDMOSFET transistor (100) is provided which includes a substrate (150), a drift region (110) surrounding a drain region (128), a first well region (107) surrounding source region (127), a well buffer region (106) separating the drift region and first well region to at least partly define a first channel region, a gate electrode (118) formed over the first channel region having a source-side gate edge aligned with the first well region (107), an LDD extension region (120) extending from the source region to the channel region, and a dielectric RESURF drain extension structure (161) formed at the drain of the gate electrode (118) using the plurality of STI stripes (114).
Bibliography:Application Number: US20100860565