Radiation-hardened memory element with multiple delay elements
A radiation hardened memory element includes at least two delay elements for maintaining radiation hardness. In an example, the memory element is an SRAM cell. Both delays are coupled together in series so that if either one of the delays fails, a delay will still be maintained within the SRAM cell....
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
01.07.2014
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Subjects | |
Online Access | Get full text |
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Summary: | A radiation hardened memory element includes at least two delay elements for maintaining radiation hardness. In an example, the memory element is an SRAM cell. Both delays are coupled together in series so that if either one of the delays fails, a delay will still be maintained within the SRAM cell. The critical areas of the delays may be positioned so that a common line of sight cannot be made between each delay and a circuit node. |
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Bibliography: | Application Number: US20060389767 |