Method and apparatus for characterizing discontinuities in semiconductor devices

An approach is provided for characterizing discontinuities in semiconductor devices, for example in a metal silicide. An image of an integrated circuit is caused, at least in part, to be received. The image is analyzed for at least one discontinuity in the integrated circuit structure. A relative me...

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Bibliographic Details
Main Authors RICHTER INKA, FITZ CLEMENS, RINDERKNECHT JOCHEN
Format Patent
LanguageEnglish
Published 24.06.2014
Subjects
CALCULATING
COMPUTING
COUNTING
HANDLING RECORD CARRIERS
IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
PHYSICS
PRESENTATION OF DATA
RECOGNITION OF DATA
RECORD CARRIERS
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Summary:An approach is provided for characterizing discontinuities in semiconductor devices, for example in a metal silicide. An image of an integrated circuit is caused, at least in part, to be received. The image is analyzed for at least one discontinuity in the integrated circuit structure. A relative measure of the at least one discontinuity is determined in comparison to the integrated circuit structure based on analyzing the image.
Bibliography:Application Number: US201113223998