Semiconductor device, and method for producing same
Disclosed is a semiconductor device 100A that has first lightly doped drain regions 31A1 and 32A1 between a source region 34A1 and a channel region 33A1 of a first conductive-type driver circuit TFT 10A1 and/or between a drain region 35A1 and the channel region 33A1 of the first conductive-type driv...
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Main Author | |
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Format | Patent |
Language | English |
Published |
17.06.2014
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Subjects | |
Online Access | Get full text |
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Summary: | Disclosed is a semiconductor device 100A that has first lightly doped drain regions 31A1 and 32A1 between a source region 34A1 and a channel region 33A1 of a first conductive-type driver circuit TFT 10A1 and/or between a drain region 35A1 and the channel region 33A1 of the first conductive-type driver circuit TFT 10A1, and second lightly doped drain regions 31C and 32C between a source region 34C and a channel region 33C of a first conductive-type pixel TFT 10C and/or between a drain region 35C and the channel region 33C of the first conductive-type pixel TFT 10C, in which the first lightly doped drain regions 31A1 and 32A1 have first conductive-type impurities n1 at a first impurity concentration C1, and the second lightly doped drain regions 31C and 32C have first conductive-type impurities n1 at the first impurity concentration C1 and second conductive-type impurities p2 at a second impurity concentration C2. |
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Bibliography: | Application Number: US201113698356 |