Co-implant for backside illumination sensor

A system and method for image sensing is disclosed. An embodiment comprises a substrate with a pixel region, the substrate having a front side and a backside. A co-implant process is performed along the backside of the substrate opposing a photosensitive element positioned along the front side of th...

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Main Authors HUANG HSUN-YING, LU SHOU SHU, HSIEH CHI-HSUN, CHEN JIA-REN, CHEN CHENG-TSUNG, CHEN YU-PING, SHEN HORNG-DAW, CHANG YUNGNG, YEH YUNG-FU, LIANG CHI-YUAN, CHEN JUAN-LIN
Format Patent
LanguageEnglish
Published 10.06.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PICTORIAL COMMUNICATION, e.g. TELEVISION
SEMICONDUCTOR DEVICES
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Summary:A system and method for image sensing is disclosed. An embodiment comprises a substrate with a pixel region, the substrate having a front side and a backside. A co-implant process is performed along the backside of the substrate opposing a photosensitive element positioned along the front side of the substrate. The co-implant process utilizes a first pre-amorphization implant process that creates a pre-amorphization region. A dopant is then implanted wherein the pre-amorphization region retards or reduces the diffusion or tailing of the dopants into the photosensitive region. An anti-reflective layer, a color filter, and a microlens may also be formed over the co-implant region.
Bibliography:Application Number: US201313891993