Local interconnects compatible with replacement gate structures

• Main Author: SARDESAI VIRAJ Y
• Format: Patent
• Language: English
• Published: 03.06.2014
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

After forming replacement gate structures that are embedded in a planarized dielectric layer on a semiconductor substrate, a contact-level dielectric layer is deposited over a planar surface of the planarized dielectric layer and the replacement gate structures. Substrate contact via holes are formed through the contact-level dielectric layer and the planarized dielectric layer, and metal semiconductor alloy portions are formed on exposed semiconductor materials. Gate contact via holes are subsequently formed through the contact-level dielectric layer. The substrate contact via holes and the gate contact via holes are simultaneously filled with a conductive material to form substrate contact structures and gate contact structures. The substrate contact structures and gate contact structures can be employed to provide local interconnect structures that provide electrical connections between two components that are laterally spaced on the semiconductor substrate.