Chemical mechanical polishing system

A chemical mechanical polishing (CMP) system includes a wafer polishing unit comprising a waste liquid sink for receiving a used slurry and a waste slurry drain piping for draining the used slurry; and a post-CMP cleaning unit coupled to the wafer polishing unit such that a used base chemical such a...

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Bibliographic Details
Main Authors LIU LIUNG, CHEN YI-NAN, LIU HSIEN-WEN
Format Patent
LanguageEnglish
Published 03.06.2014
Subjects
CLEANING
CLEANING IN GENERAL
PERFORMING OPERATIONS
PREVENTION OF FOULING IN GENERAL
TRANSPORTING
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Summary:A chemical mechanical polishing (CMP) system includes a wafer polishing unit comprising a waste liquid sink for receiving a used slurry and a waste slurry drain piping for draining the used slurry; and a post-CMP cleaning unit coupled to the wafer polishing unit such that a used base chemical such as tetramethyl ammonium hydroxide (TMAH) produced from the post-CMP cleaning unit flows toward the wafer polishing unit to frequently wash at least the waste slurry drain piping in a real time fashion on a wafer by wafer basis.
Bibliography:Application Number: US201113105874