High-K dielectric stack and method of fabricating same

A method for improving the reliability of a high-k dielectric layer or a high-k dielectric stack by forming an amorphous high-k dielectric layer over an insulating layer, doping the amorphous high-k dielectric layer with nitrogen atoms, and subsequently heating the resulting structure at a temperatu...

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Bibliographic Details
Main Authors FENIGSTEIN AMOS, ROIZIN YAKOV, HEIMAN ALEXEY, LISIANSKY MICHAEL
Format Patent
LanguageEnglish
Published 13.05.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for improving the reliability of a high-k dielectric layer or a high-k dielectric stack by forming an amorphous high-k dielectric layer over an insulating layer, doping the amorphous high-k dielectric layer with nitrogen atoms, and subsequently heating the resulting structure at a temperature greater than or equal to the crystallization temperature of the high-k dielectric material, thereby transforming the high-k dielectric material from an amorphous state to a crystalline state, and causing nitrogen atoms to diffuse into the insulating layer.
Bibliography:Application Number: US20080014073