Embedded bonding pad for image sensors

A semiconductor device includes a semiconductor substrate having a front surface and a back surface, elements formed on the substrate, interconnect metal layers formed over the front surface of the substrate, including a topmost interconnect metal layer, an inter-metal dielectric for insulating each...

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Bibliographic Details
Main Authors HSU TZU-HSUAN, TSAI CHIA-SHIUNG, HSIEH YUANIH, YU CHUNG-YI, SHIAU GWO-YUH, LIU SHIHANG, FU SHIHI
Format Patent
LanguageEnglish
Published 29.04.2014
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Summary:A semiconductor device includes a semiconductor substrate having a front surface and a back surface, elements formed on the substrate, interconnect metal layers formed over the front surface of the substrate, including a topmost interconnect metal layer, an inter-metal dielectric for insulating each of the plurality of interconnect metal layers, and a bonding pad disposed within the inter-metal dielectric, the bonding pad in contact with one of the interconnect metal layers other than the topmost interconnect metal layer.
Bibliography:Application Number: US20070835814