Integration of SMT in replacement gate FINFET process flow

A method of fabricating a FINFET includes the following steps. A plurality of fins is patterned in a wafer. A dummy gate is formed covering a portion of the fins which serves as a channel region. Spacers are formed on opposite sides of the dummy gate. The dummy gate is removed thus forming a trench...

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Bibliographic Details
Main Authors GUO DECHAO, CAI MING, YEH CHUNN
Format Patent
LanguageEnglish
Published 15.04.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of fabricating a FINFET includes the following steps. A plurality of fins is patterned in a wafer. A dummy gate is formed covering a portion of the fins which serves as a channel region. Spacers are formed on opposite sides of the dummy gate. The dummy gate is removed thus forming a trench between the spacers that exposes the fins in the channel region. A nitride material is deposited into the trench so as to cover a top and sidewalls of each of the fins in the channel region. The wafer is annealed to induce strain in the nitride material thus forming a stressed nitride film that covers and induces strain in the top and the sidewalls of each of the fins in the channel region of the device. The stressed nitride film is removed. A replacement gate is formed covering the fins in the channel region.
Bibliography:Application Number: US201213366904