Methods of forming a metal silicide region on at least one silicon structure

A method of forming a metal silicide region. The method comprises forming a metal material over and in contact with exposed surfaces of a dielectric material and silicon structures protruding from the dielectric material. A capping material is formed over and in contact with the metal material. The...

Full description

Saved in:
Bibliographic Details
Main Authors BELLANDI ENRICO, LAZZARI CARLA MARIA
Format Patent
LanguageEnglish
Published 08.04.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A method of forming a metal silicide region. The method comprises forming a metal material over and in contact with exposed surfaces of a dielectric material and silicon structures protruding from the dielectric material. A capping material is formed over and in contact with the metal material. The silicon structures are exposed to heat to effectuate a multidirectional diffusion of the metal material into the silicon structures to form a first metal silicide material. The capping material and unreacted portions of the metal material are removed. The silicon structures are exposed to heat to substantially convert the first metal silicide material into a second metal silicide material. A method of semiconductor device fabrication, an array of silicon structures, and a semiconductor device structure are also described.
Bibliography:Application Number: US201213400920