Through silicon via structure having protection ring

A method of fabricating a semiconductor device includes the following steps. A semiconductor substrate having a first side and a second side facing to the first side is provided. At least an opening is disposed in the semiconductor substrate of a protection region defined in the first side. A first...

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Bibliographic Details
Main Authors CHIEN SUNIEH, LIN YUNGANG, KUO CHIEN-LI, LIN MING-TSE
Format Patent
LanguageEnglish
Published 08.04.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of fabricating a semiconductor device includes the following steps. A semiconductor substrate having a first side and a second side facing to the first side is provided. At least an opening is disposed in the semiconductor substrate of a protection region defined in the first side. A first material layer is formed on the first side and the second side, and the first material layer partially fills the opening. Subsequently, a part of the first material layer on the first side and outside the protection region is removed. A second material layer is formed on the first side and the second side, and the second material layer fills the opening. Then, a part of the second material layer on the first side and outside the protection region is removed. Finally, the remaining first material layer and the remaining second material layer on the first side are planarized.
Bibliography:Application Number: US201113309559